elektronische bauelemente SSM2625 0.9a , 250v , r ds(on) 1.7 ? n-channel enhancement mode power mosfet 22-apr-2014 rev.b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSM2625 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sot-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? lower gate charge ? simple drive requirement ? fast switching characteristic marking package information package mpq leader size sot-223 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 250 v gate-source voltage v gs 20 v t a =25c 0.9 a continuous drain current 1 @v gs =10v t a =70c i d 0.7 a pulsed drain current 2 i dm 3.6 a power dissipation 3 t a =25c p d 2.2 w operating junction & storage temperature t j , t stg -65~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 57 c / w ? ? g ? ? s d ?? ? 2625 ???? ? = date code sot-223 millimete r millimete r ref. min. max. ref. min. max. a 5.90 6.70 g - 0.18 b 6.70 7.30 h 2.00 ref. c 3.30 3.80 j 0.20 0.40 d 1.42 1.90 k 1.10 ref. e 4.45 4.75 l 2.30 ref. f 0.60 0.85 m 2.80 3.20 top view 1 2 3 4 a m b d l k f g h j e c
elektronische bauelemente SSM2625 0.9a , 250v , r ds(on) 1.7 ? n-channel enhancement mode power mosfet 22-apr-2014 rev.b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 250 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 1.5 - 3.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =250v, v gs =0 - 1.4 1.7 v gs =10v, i d =0.9a static drain-source on-resistance 2 r ds(on) - 1.45 1.9 ? v gs =4.5v, i d =0.9a diode forward voltage 2 v sd - 0.8 1.2 v i s =0.9a, v gs =0, t j =25c total gate charge q g - 30 - nc i d =1.5a, v ds =200v v gs =10v total gate charge q g - 17 - gate-source charge q gs - 3 - gate-drain (??miller??) change q gd - 12 - nc i d =1.5a v ds =200v v gs =4.5v turn-on delay time 2 t d(on) - 19 - rise time t r - 4 - turn-off delay time t d(off) - 48 - fall time t f - 13 - ns v dd =125v v gs =10v r g =6 ? r l =125 ? input capacitance c iss - 1170 - output capacitance c oss - 36 - reverse transfer capacitance c rss - 10 - pf v gs =0 v ds =15v f =1.0mhz note: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the power dissipation is limited by 150c, junction temperature. 4. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation.
elektronische bauelemente SSM2625 0.9a , 250v , r ds(on) 1.7 ? n-channel enhancement mode power mosfet 22-apr-2014 rev.b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSM2625 0.9a , 250v , r ds(on) 1.7 ? n-channel enhancement mode power mosfet 22-apr-2014 rev.b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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